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2N3600

Part Number	2N3600
Manufacturer	RCA
Description	RF Power Transistors
Published	Jul 14, 2018
Detailed Description	File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ ffilrnLJD Solid State Division RF Power Tra...
Datasheet	2N3600 PDF File

Overview

File No.
83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ ffilrnLJD Solid State Division RF Power Transistors 2N918 2N3600 RCA-2N918 and RCA-2N3600 are double-diffused epitaxial planar transistors of the silicon n-p-n type.
They are extremely useful in low-noise-amplifier, oscillator, and converter applications at VHF frequencies.
These devices utilize a hermetically sealed fourlead JEDEC TO-72 package.
All active elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead in applications requiring minimum feedback capacitance, shielding of the device, or both.
MAXIMUM RATINGS, Absolute-Maximum Values: 2N918 2N3600 COLLECTOR-TD-BASE VOLTAGE, VCSO' .
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30 30 mnx.
V COLLECTOR-1'D-EMITTER VOLTAGE, VCEO' .
15 15 max.
V EMITTER-TD-SASE VOLTAGE.
VESO··········· .
COLLECTOR CURRENT, Ic 50 max.
V max.
rnA TRANSISTOR DISSIPATION, P T: For operation with heat sink: At case ...

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