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K6R1004C1D

Part Number	K6R1004C1D
Manufacturer	Samsung semiconductor
Description	CMOS SRAM
Published	Dec 8, 2017
Detailed Description	K6R1004C1D PRELIMINARY PRELPIrMeliImNAinRarYy CMOS SRAM Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM...
Datasheet	K6R1004C1D PDF File

Overview

K6R1004C1D PRELIMINARY PRELPIrMeliImNAinRarYy CMOS SRAM Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.
0V Operating).
Revision History Rev.
No.
History Rev.
0.
0 Rev.
0.
1 Rev.
0.
2 Initial release with Preliminary.
Current modify 1.
Delete 15ns speed bin.
2.
Change Icc for Industrial mode.
Item ICC(Industrial) 10ns 12ns Previous 85mA 75mA Current 75mA 65mA Draft Data Remark June.
8.
2001 September.
9.
2001 December.
18.
2001 Preliminary Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to ...

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