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K9F5608Q0C

Samsung
Part Number K9F5608Q0C
Manufacturer Samsung
Description NAND Flash Memory
Published Dec 8, 2017
Detailed Description K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 B...
Datasheet PDF File K9F5608Q0C PDF File

K9F5608Q0C
K9F5608Q0C

Overview
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No.
History 0.
0 Initial issue.
Draft Date Apr.
25th 2002 Remark Advance 1.
0 1.
Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.
C Dec.
14th 2002 Preliminary 2.
Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.
8V device (Page 36) 3.
Add the data protection Vcc guidence for 1.
8V device - below about 1.
1V.
(Page 37) 4.
Add the specification of Block Lock scheme.
(Page 32~35) 5.
Pin assignment of TBGA A3 ball is changed.
(before) N.
C --> (after) Vss 6.
Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.
C 2.
0 1.
The Maximum operating current is changed.
Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA Jan.
17th 2003 Preliminary 2.
1 The min.
Vcc value 1.
8V devices is changed.
K9F56XXQ0C : Vcc 1.
65V~1.
95V --> 1.
70V~1.
95V Mar.
5th 2003 Preliminary 2.
2 Pb-free Package i...


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