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BS62UV2001

Part Number	BS62UV2001
Manufacturer	Brilliance Semiconductor
Description	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit DESCRIPTION BS62UV2001 • Wide Vcc operation voltage :...
Datasheet	BS62UV2001 PDF File

Overview

BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit DESCRIPTION BS62UV2001 • Wide Vcc operation voltage : 1.
8V ~ 3.
6V • Ultra low power consumption : Vcc = 2.
0V C-grade : 15mA (Max.
) operating current I- grade : 20mA (Max.
) operating current 0.
08uA (Typ.
) CMOS standby current Vcc = 3.
0V C-grade : 20mA (Max.
) operating current I- grade : 25mA (Max.
) operating current 0.
1uA (Typ.
) CMOS standby current • High speed access time : -70 70ns(Max.
) at Vcc = 2.
0V -10 100ns(Max.
) at Vcc = 2.
0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
5V • Easy expansion with CE2, CE1, and OE options The BS62UV2001 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.
8V to 3.
6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a...

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BS62UV2001 Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit - Brilliance Semiconductor

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