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BSH205

NXP
Part Number BSH205
Manufacturer NXP
Description P-channel enhancement mode MOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold v...
Datasheet PDF File BSH205 PDF File

BSH205
BSH205

Overview
Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH205 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.
75 A RDS(ON) ≤ 0.
5 Ω (VGS = -2.
5 V) VGS(TO) ≥ 0.
4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor.
This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
The BSH205 is supplied in the SOT23 subminiature surface mounting package.
PINNING PIN 1 2 3 gate source drain DESCRIPTION SOT23 3 Top view 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C MIN.
- 55 MAX.
-12 -12 ±8 -0.
75 -0.
47 -3 0.
417 0.
17 150 UNIT V V V A A A W W ˚C THERMAL RESISTANCES SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint TYP.
300 MAX.
UNIT K/W August 1998 1 Rev 1.
000 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = -10 µA VDS = VGS; ID = -1 mA Tj = 150˚C VGS = -4.
5 V; ID = -430 mA VGS = -2.
5 V; ID = -430 mA VGS = -1.
8 V; ID = -210 mA VGS = -2.
5 V; ID = -430 mA; Tj = 150˚C Forward transconductance VDS = -9.
6 V; ID = -430 mA Gate source leakage current VGS = ±8 V; VDS = 0 V Zero gate voltage drain VDS = -9.
6 V; VGS = 0 V; current Tj = 150˚C...


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