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BSL211SP

Infineon Technologies AG
Part Number BSL211SP
Manufacturer Infineon Technologies AG
Description OptiMOS -P Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BSL211SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Leve...
Datasheet PDF File BSL211SP PDF File

BSL211SP
BSL211SP

Overview
Preliminary data BSL211SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.
5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 67 -4.
7 P-TSOP6-6 V mΩ A 4 5 6 3 2 1 Type BSL211SP Package P-TSOP6-6 Ordering Code Q67042-S4063 Marking sPB Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -4.
7 -3.
8 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -18.
8 26 -6 ±12 2 -55.
.
.
+150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-4.
7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-4.
7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area 1) BSL211SP Symbol min.
RthJS RthJA - Values typ.
max.
50 230 62.
5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.
6 Values typ.
-0.
9 max.
-1.
2 Unit V Gate threshold voltage, VGS = VDS ID =-25µA Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25°C VDS =-20V, VGS =0, Tj =150°C µA -0.
1 -10 -10 94 54 -1 -100 -100 110 67 nA mΩ Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.
5V, ID =-3.
7A Drain-source on-state resistance VGS =-4.
5, ID =-4.
7A 1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air; t ≤ 5 sec.
Page 2 2001-12-06 Preliminary data Elec...


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