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BSM100GB120DN2

Siemens Semiconductor Group
Part Number BSM100GB120DN2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated meta...
Datasheet PDF File BSM100GB120DN2 PDF File

BSM100GB120DN2
BSM100GB120DN2

Overview
BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2107-A70 1200V 150A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 150 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 300 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 800 W + 150 -55 .
.
.
+ 150 ≤ 0.
16 ≤ 0.
3 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GB 120 DN2 Electrical Characterist...


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