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BSM150GB120DN2E3166

Siemens Semiconductor Group
Part Number BSM150GB120DN2E3166
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged d...
Datasheet PDF File BSM150GB120DN2E3166 PDF File

BSM150GB120DN2E3166
BSM150GB120DN2E3166

Overview
BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2112-A70 1200V 210A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 420 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 .
.
.
+ 150 ≤ 0.
1 ≤ 0.
125 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip te...


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