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BSM150GB170DN2

Siemens Semiconductor Group
Part Number BSM150GB170DN2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package wit...
Datasheet PDF File BSM150GB170DN2 PDF File

BSM150GB170DN2
BSM150GB170DN2

Overview
BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type BSM 150 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2704-A67 1700V 220A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 220 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 440 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 .
.
.
+ 150 ≤ 0.
1 ≤ 0.
32 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temper...


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