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BSM181R

Siemens Semiconductor Group
Part Number BSM181R
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description SIMOPAC® Module BSM 181 BSM 181 R VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ q q q q q q Power module Single switch N c...
Datasheet PDF File BSM181R PDF File

BSM181R
BSM181R

Overview
SIMOPAC® Module BSM 181 BSM 181 R VDS = 100 V ID = 200 A R DS(on) = 8.
5 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 181 BSM 181 R Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1001-A2 C67076-A1016-A2 Symbol Values 800 800 ± 20 36 144 – 55 … + 150 700 ≤ 0.
18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis – – – – Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 ˚C Pulsed drain current, TC = 25 ˚C Operating and storage temperature range Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage2), t = 1 min.
Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A ˚C W K/W Vac mm – See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc.
with DIN 50 014, IEC 146, para.
492.
1.
Semiconductor Group 57 03.
96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.
25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 23 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max.
, ID = 23 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 400 V, VGS = 10 V ID = 23 A, RGS = 3.
3 Ω Turn-off time toff (toff = td (off) + tf) VCC = 400 V, VGS = 10 V ID = 23 A, RGS = 3.
3 Ω Values typ.
max.
Unit V(BR)DSS 800 – 3.
0 – 4.
0 ...


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