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BSM35GB120DN2

Part Number	BSM35GB120DN2
Manufacturer	Siemens Semiconductor Group
Description	IGBT
Published	Mar 23, 2005
Detailed Description	BSM 35 GB 120 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diod...
Datasheet	BSM35GB120DN2 PDF File

Overview

BSM 35 GB 120 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2111-A70 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 280 W + 150 -55 .
.
.
+ 150 ≤ 0.
44 ≤ 0.
8 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature S...

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BSM35GB120DN2 IGBT - Siemens Semiconductor Group

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