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BSM35GD120D2

Siemens Semiconductor Group
Part Number BSM35GD120D2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel di...
Datasheet PDF File BSM35GD120D2 PDF File

BSM35GD120D2
BSM35GD120D2


Overview
BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SIXPACK 1 Ordering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 280 W + 150 -55 .
.
.
+ 150 ≤ 0.
44 ≤ 0.
8 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Feb-10-1997 BSM 35 GD 120 D2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Gate threshold voltage Values typ.
max.
Unit VGE(th) 4.
5 5.
5 2.
7 3.
3 0.
6 2.
4 6.
5 3.
2 3.
9 V VGE = VCE, IC = 1.
2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 35 A, Tj = 25 °C VGE = 15 V, IC = 35 A, Tj = 125 °C Zero gate voltage collector current ICES 1 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 150 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 11 2 0.
3 0.
14 - S nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Feb-10-1997 BSM 35 GD 120 D2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Switching Characteristics, Inductiv...


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