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BSN20

NXP
Part Number BSN20
Manufacturer NXP
Description N-channel Transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSN20 N-channel enhancement mode vertical D-MOS transistor Product specification Sup...
Datasheet PDF File BSN20 PDF File

BSN20
BSN20

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSN20 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications.
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package.
1 2 MAM273 BSN20 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d DESCRIPTION gate source drain handbook, halfpage 3 d g s CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
Top view Marking code: M8p.
Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID RDSon VGSth PARAMETER drain-source voltage (DC) drain current (DC) drain-source on-state resistance gate-source threshold voltage ID = 100 mA; VGS = 10 V ID = 1 mA; VGS = VDS CONDITIONS MAX.
50 100 15 1.
8 V mA Ω V UNIT 1997 Jun 18 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature up to Tamb = 25 °C; note 1 up to Tamb = 25 °C; note 2 open drain CONDITIONS − − − − − − −65 − MIN.
BSN20 MAX.
50 ±20 100 300 300 250 +150 150 V V UNIT mA mA mW mW °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 Notes to the Limiting values and Thermal characteristics 1.
Device mounted on a ceramic substrate, 10 × 8 × 0.
7 mm.
2.
Device mounted on a printed-ci...


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