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BSN254A

NXP
Part Number BSN254A
Manufacturer NXP
Description N-channel Transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSN254 BSN254A N-channel enhancement mode vertical D-MOS transistors Product specifi...
Datasheet PDF File BSN254A PDF File

BSN254A
BSN254A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSN254 BSN254A N-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors DESCRIPTION N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No second breakdown • Low RDS (on) PINNING (BSN254) 1 = gate 2 = drain 3 = source PINNING (BSN254A) 1 = source 2 = gate 3 = drain PIN CONFIGURATION - TO-92 VARIANT QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 300 mA; VGS = 10 V Gate-source threshold voltage RDS(on) VGS(th) VDS ID Ptot BSN254 BSN254A max.
max.
max.
typ.
max.
max.
250 V 300 mA 1 W 5.
0 Ω 7.
0 Ω 2 V handbook, halfpage d 1 2 3 g MAM146 s Note: Various pinnings are available on request.
Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS ± VGSO ID IDM Ptot Tstg Tj max.
max.
max.
max.
max.
max.
BSN254 BSN254A 250 V 20 V 300 mA 1.
2 A 1 W 150 °C −65 to + 150 °C 125 K/W 1.
Device mounted on printed-circuit board, max.
lead length 4 mm, mounting pad for drain lead min.
10 mm × 10 mm.
CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 Drain-sou...


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