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BSO200N03S

Infineon Technologies AG
Part Number BSO200N03S
Manufacturer Infineon Technologies AG
Description OptiMOS2 Power-Transistor
Published Mar 23, 2005
Detailed Description BSO200N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/...
Datasheet PDF File BSO200N03S PDF File

BSO200N03S
BSO200N03S

Overview
BSO200N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 20 8.
8 V mΩ A P-DSO-8 Type BSO200N03S Package P-DSO-8 Ordering Code Q67042-S4212 Marking 200N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C3) I D=8.
8 A, R GS=25 Ω I D=8.
8 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 8.
8 7.
1 35 17 mJ steady state 7.
0 5.
6 A Unit Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg 6 ±20 kV/µs V 1.
56 W ...


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