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BSO300N03S

Part Number	BSO300N03S
Manufacturer	Infineon Technologies AG
Description	OptiMOS2 Power-Transistor
Published	Mar 23, 2005
Detailed Description	BSO300N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/...
Datasheet	BSO300N03S PDF File

Overview

BSO300N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 30 7.
2 V mΩ A P-DSO-8 Type BSO300N03S Package P-DSO-8 Ordering Code Q67042-S4205 Marking 300N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C3) I D=7.
2 A, R GS=25 Ω I D=7.
2 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 7.
2 5.
8 29 10 mJ steady state 5.
7 4.
6 A Unit Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg 6 ±20 kV/µs V 1.
56 W °C T A=25 °C2) 2.
5 -55 .
.
.
150 55/150/56 Rev.
1.
11 page 1 2004-02-09 BSO300N03S Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area2), t p≤10 s 6 cm2 cooling area2), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=8 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=6.
1 A V GS=10 V, I D=7.
2 A Gate resistance Transconductance 1) 2) Values typ.
max.
Unit - - 35 K/W R thJA - - 110 - - 150 - - 50 - - 80 30 1.
2 - 1.
6 0.
1 2 1 V µA - 10 10 36 25 0.
6 14 100 100 45...

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BSO300N03S OptiMOS2 Power-Transistor - Infineon Technologies AG

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