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BSO613SPV

Infineon Technologies AG
Part Number BSO613SPV
Manufacturer Infineon Technologies AG
Description SIPMOS Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary data SIPMOS® Small-Signal-Transistor Features · BSO613SPV Product Summary Drain source voltage Drain-sourc...
Datasheet PDF File BSO613SPV PDF File

BSO613SPV
BSO613SPV

Overview
Preliminary data SIPMOS® Small-Signal-Transistor Features · BSO613SPV Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 Top View 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.
13 -3.
44 V W · · · A SIS00062 Type BSO613SPV Package SO 8 Ordering Code Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.
44 -13.
8 150 0.
25 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse mJ I D = -3.
44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -3.
44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 2.
5 -55.
.
.
+150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min.
footprint; t £ BSO613SPV Symbol min.
Values typ.
max.
25 Unit RthJS RthJA - K/W 10 sec.
- - 100 50 @ 6 cm 2 cooling area 1); t £ 10 sec.
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min.
Values typ.
-3 max.
-4 µA -0.
1 -10 -10 0.
11 -1 -100 -100 0.
13 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.
1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 125 °C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -3.
44 A 1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertic...


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