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MT28EW01GABA

Part Number	MT28EW01GABA
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory
Published	Dec 15, 2017
Detailed Description	1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Singl...
Datasheet	MT28EW01GABA PDF File

Overview

1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.
7–3.
6V (program, erase, read) – VCCQ = 1.
65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.
7-3.
6V) – Random access: 100ns (VCCQ = 1.
65-VCC) • Buffer program (512-word program buffer) – 2.
0 MB/s (TYP) when using full buffer program – 2.
5 MB/s (TYP) when using accelerated buffer program (VHH) • Word/Byte program: 25us per word (TYP) • Block erase (128KB): 0.
2s (TYP) • Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus • Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation • Unlock bypass, block erase, chip erase...

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MT28EW01GABA Parallel NOR Flash Embedded Memory - Micron Technology

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