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VN330SP-E

STMicroelectronics
Part Number VN330SP-E
Manufacturer STMicroelectronics
Description Quad high-side smart power solid-state relay
Published Dec 18, 2017
Detailed Description Product status link VN330SP-E Product label VN330SP-E Datasheet Quad high-side smart power solid-state relay Features •...
Datasheet PDF File VN330SP-E PDF File

VN330SP-E
VN330SP-E


Overview
Product status link VN330SP-E Product label VN330SP-E Datasheet Quad high-side smart power solid-state relay Features • Output current: 0.
7 A per channel • Digital input clamped at 32 V minimum voltage • Shorted load and overtemperature protections • Built-in current limiter • Undervoltage shutdown • Open drain diagnostic output • Fast demagnetization of inductive loads • Conforms to IEC 61131-2 Applications • Programmable logic control • Industrial PC peripheral input/output • Numerical control machines Description The VN330SP-E is a monolithic device developed using VIPower technology, intended to drive four independent resistive or inductive loads with one side connected to ground.
Active current limitation prevents dropping of the system power supply in case of shorted load.
Built-in thermal shutdown protects the chip from overtemperature and short-circuit.
The open drain diagnostic output indicates overtemperature conditions.
DS4361 - Rev 5 - May 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Block diagram Figure 1.
Block diagram VN330SP-E Block diagram DS4361 - Rev 5 page 2/21 2 Pin connection Figure 2.
Connection diagram (top view) VN330SP-E Pin connection DS4361 - Rev 5 page 3/21 Figure 3.
Current and voltage conventions VN330SP-E Pin connection DS4361 - Rev 5 page 4/21 VN330SP-E Maximum ratings 3 Maximum ratings Symbol VCC -VCC IOUT IR IIN IDIAG VESD EAS PTOT TJ TSTG Table 1.
Absolute maximum ratings Parameter Power supply voltage Reverse supply voltage Output current Reverse output current (per channel) Input current range DIAG pin current Electrostatic discharge (R = 1.
5 kΩ; C = 100 pF) Single pulse avalanche energy, all channels active simultaneously, Tamb = 125 °C, ILOAD = 0.
625 A Power dissipation at TC = 25 °C Junction operating temperature Storage temperature Value Unit 45 V -0.
3 V Internally limited A -6 A ±10 mA ±10 mA 2000 V 4 J Internally limited W Interna...


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