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KBP200

EIC
Part Number KBP200
Manufacturer EIC
Description SILICON BRIDGE RECTIFIERS
Published Dec 21, 2017
Detailed Description www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 ...
Datasheet PDF File KBP200 PDF File

KBP200
KBP200

Overview
www.
eicsemi.
com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.
0 Amperes FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.
4 grams 0.
448 (11.
4) 0.
433 (11.
0) 0.
696 (17.
7) MIN.
0.
051 (1.
30) 0.
043 (1.
10) KBP 0.
59 (14.
9) 0.
57 (14.
5) + AC AC Φ3 0.
0307 (0.
78) 0.
0303 (0.
77) 0.
150 (3.
82) 0.
148 (3.
78) 0.
151 (3.
85 ) 0.
147 (3.
75) Dimensions in inches and ( millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.
3 ms.
) Maximum Forward Voltage per Diode at IF = 1.
0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance per Diode (Note 1) Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range SYMBOL KBP 200 VRRM 50 VRMS 35 VDC 50 IF(AV) KBP 201 100 70 100 KBP 202 200 140 200 KBP 204 400 280 400 2.
0 KBP 206 600 420 600 KBP 208 800 560 800 KBP 210 1000 700 1000 UNIT V V V A IFSM I2t VF IR IR(H) CJ RθJA TJ TSTG 60 10 1.
0 10 1.
0 24 30 - 50 to + 125 - 50 to + 125 A A2S V μA mA pF °C/W °C °C Notes : 1 ) Measured at 1.
0 MHz and applied reve...


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