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BT131

NXP
Part Number BT131
Manufacturer NXP
Description Triacs
Published Mar 23, 2005
Detailed Description TO-92 BT131 series Triacs logic level Rev. 9 — 9 November 2011 Product data sheet 1. Product profile 1.1 General des...
Datasheet PDF File BT131 PDF File

BT131
BT131


Overview
TO-92 BT131 series Triacs logic level Rev.
9 — 9 November 2011 Product data sheet 1.
Product profile 1.
1 General description Passivated, sensitive gate triacs in a SOT54 plastic package 1.
2 Features and benefits  Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.
3 Applications  General purpose switching and phase control 1.
4 Quick reference data  VDRM  600 V (BT131-600)  VDRM  800 V (BT131-800)  IT(RMS)  1 A  ITSM  12.
5 A 2.
Pinning information Table 1.
Pin 1 2 3 Pinning Description main terminal 2 (T2) gate (G) main terminal 1 (T1) Simplified outline Symbol T2 sym051 T1 G 321 SOT54 (TO-92) NXP Semiconductors BT131 series Triacs logic level 3.
Ordering information Table 2.
Ordering information Type number Package Name Description BT131-600 TO-92 plastic single-ended leaded (through hole) package; 3 leads BT131-800 4.
Limiting values Version SOT54 Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDRM repetitive peak off-state voltage BT131-600 BT131-800 IT(RMS) RMS on-state current all conduction angles; Tlead = 51.
2 C; see Figure 1, 4 and 5 ITSM non-repetitive peak on-state half sine wave; Tj = 25 C current prior to surge; see Figure 2 and 3 t = 20 ms t = 16.
7 ms I2t I2t for fusing t = 10 ms dIT/dt rate of rise of on-state current ITM = 1.
5 A; IG = 20 mA; dIG/dt = 200 mA/s T2+ G+ T2+ G T2 G T2 G+ IGM PGM PG(AV) Tstg Tj peak gate current peak gate power average gate power storage temperature junction temperature over any 20 ms period Min [1] - - 40 - Max Unit 600 V 800 V 1A 12.
5 13.
8 1.
28 A A A2s 50 50 50 10 2 5 0.
1 +150 125 A/s A/s A/s A/s A W W C C [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 3 A/s.
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