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BT134W-600G

NXP
Part Number BT134W-600G
Manufacturer NXP
Description Triacs
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Triacs BT134W series GENERAL DESCRIPTION Glass passivated triacs in a p...
Datasheet PDF File BT134W-600G PDF File

BT134W-600G
BT134W-600G

Overview
Philips Semiconductors Product specification Triacs BT134W series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA SYMBOL PARAMETER BT134WBT134WBT134WRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500 500F 500G 500 1 10 600 600F 600G 600 1 10 800 800F 800G 800 1 10 VDRM IT(RMS) ITSM V A A PINNING - SOT223 PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION 4 SYMBOL T2 main terminal 2 gate main terminal 2 1 2 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tsp ≤ 108 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 1.
5 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN.
-40 -500 5001 MAX.
-600 6001 1 10 11 0.
5 50 50 50 10 2 5 5 0.
5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 3 A/µs.
September 1997 1 Rev 1.
200 Philips Semiconductors Product specification Triacs BT134W series THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder p...


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