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BT137M-500G

NXP
Part Number BT137M-500G
Manufacturer NXP
Description Triacs
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Triacs BT137S series BT137M series GENERAL DESCRIPTION Glass passivated...
Datasheet PDF File BT137M-500G PDF File

BT137M-500G
BT137M-500G

Overview
Philips Semiconductors Product specification Triacs BT137S series BT137M series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA SYMBOL PARAMETER BT137S (or BT137M)BT137S (or BT137M)BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65 VDRM IT(RMS) ITSM V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 12 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN.
-40 -500 5001 MAX.
-600 6001 8 65 71 21 50 50 50 10 2 5 5 0.
5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6 A/µs.
October 1997 1 Rev 1.
200 Philips Semiconductors Product specification Triacs BT137S series BT137M series THERMAL RESISTANCES SYMBOL R...


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