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BT138F-800G

NXP
Part Number BT138F-800G
Manufacturer NXP
Description Triacs
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Triacs BT138F series GENERAL DESCRIPTION Glass passivated triacs in a f...
Datasheet PDF File BT138F-800G PDF File

BT138F-800G
BT138F-800G

Overview
Philips Semiconductors Product specification Triacs BT138F series GENERAL DESCRIPTION Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA SYMBOL PARAMETER BT138FBT138FBT138FRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500 500F 500G 500 12 90 600 600F 600G 600 12 90 800 800F 800G 800 12 90 VDRM IT(RMS) ITSM V A A PINNING - SOT186 PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths ≤ 56 ˚C full sine wave; Tj = 125 ˚C prior to surge; with reapplied VDRM(max) t = 20 ms t = 16.
7 ms t = 10 ms ITM = 20 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN.
-40 -500 5001 MAX.
-600 6001 12 90 100 40 50 50 50 10 2 5 5 0.
5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
February 1996 1 Rev 1.
100 Philips Semiconductors Product specification Triacs BT138F series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBO...


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