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JS28F256M29EW

MICRON
Part Number JS28F256M29EW
Manufacturer MICRON
Description Parallel NOR Flash Embedded Memory
Published Jan 5, 2018
Detailed Description 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28...
Datasheet PDF File JS28F256M29EW PDF File

JS28F256M29EW
JS28F256M29EW

Overview
256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device (two 1Gb die) • Supply voltage – VCC = 2.
7–3.
6V (program, erase, read) – VCCQ = 1.
65–VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP) • Buffer program: 512-word program buffer • Program time – 0.
88µs per byte (1.
14 MB/s) TYP when using full 512-word buffer size in buffer program • Memory organization – Uniform blocks: 128-Kbytes or 64-Kwords each • Program/erase controller – Embedded byte (x8)/word (x16) program algorithms • Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – ...


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