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BT151-650R

NXP
Part Number BT151-650R
Manufacturer NXP
Description SCR
Published Mar 23, 2005
Detailed Description BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 Rev. 05 — 27 February 2009 Product data sheet 1. Product profile 1.1 General...
Datasheet PDF File BT151-650R PDF File

BT151-650R
BT151-650R

Overview
BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 Rev.
05 — 27 February 2009 Product data sheet 1.
Product profile 1.
1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.
2 Features and benefits „ High reliability „ High surge current capability „ High thermal cycling performance 1.
3 Applications „ Ignition circuits „ Motor control „ Protection Circuits „ Static switching 1.
4 Quick reference data Table 1.
Quick reference Symbol Parameter VDRM repetitive peak off-state voltage IT(AV) average on-state current IT(RMS) RMS on-state current Static characteristics IGT gate trigger current Conditions half sine wave; Tmb ≤ 109 °C; see Figure 3 half sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 Min Typ Max Unit - - 650 V - - 7.
5 A - - 12 A - 2 15 mA NXP Semiconductors 2.
Pinning information Table 2.
Pinning information Pin Symbol Description 1K cathode 2A anode 3G gate mb mb anode BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 Simplified outline mb Graphic symbol AK G sym037 3.
Ordering information 123 SOT78 (TO-220AB; SC-46) Table 3.
Ordering information Type number Package Name Description BT151-650R TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB Version SOT78 BT151-650R_5 Product data sheet Rev.
05 — 27 February 2009 © NXP B.
V.
2009.
All rights reserved.
2 of 11 NXP Semiconductors BT151-650R SCR, 12 A, 15mA, 650 V, SOT78 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDRM repetitive peak off-state voltage VRRM IT(AV) IT(RMS) repetitive peak reverse voltage average on-state current RMS on-state current half sine wave; Tmb ≤ 109 °C; see Figure 3 half sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 dIT/dt rate of rise of on-state IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs current IGM...


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