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BT258-600R

Part Number	BT258-600R
Manufacturer	NXP
Description	Thyristors logic level
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive ga...
Datasheet	BT258-600R PDF File

Overview

Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT258 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.
3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX.
-500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.
5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997 1 Rev 1.
200 Philips Semiconductors Product specification Thyristors log...

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