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BT258X-500R

NXP
Part Number BT258X-500R
Manufacturer NXP
Description Thyristors logic level
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thy...
Datasheet PDF File BT258X-500R PDF File

BT258X-500R
BT258X-500R

Overview
Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT258X series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
half sine wave; Ths ≤ 90 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.
3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX.
-500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 0.
5 150 1252 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002 1 Rev 2.
000 Philips Semiconductors Product specification Thyristors logic level ISOL...


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