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BT300M

NXP
Part Number BT300M
Manufacturer NXP
Description Thyristors
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Thyristors BT300S series BT300M series GENERAL DESCRIPTION Glass passiv...
Datasheet PDF File BT300M PDF File

BT300M
BT300M

Overview
Philips Semiconductors Product specification Thyristors BT300S series BT300M series GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT300S (or BT300M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500R 500 5 8 65 600R 600 5 8 65 800R 800 5 8 65 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode PIN CONFIGURATION tab SYMBOL a k 2 1 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
half sine wave; Tmb ≤ 107 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.
3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX.
-500R -600R -800R 5001 6001 800 5 8 65 71 21 50 2 5 5 5 0.
5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.
100 Philips Semiconductors Product specification Thyristors BT300...


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