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BR1000

EIC discrete Semiconductors
Part Number BR1000
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Mar 23, 2005
Detailed Description www.eicsemi.com BR1000 - BR1010 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * High cur...
Datasheet PDF File BR1000 PDF File

BR1000
BR1000


Overview
www.
eicsemi.
com BR1000 - BR1010 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.
1 grams BR10 0.
166 (4.
20) 0.
142 (3.
60) 0.
520 (13.
20) 0.
480 (12.
20) AC 0.
091 (2.
3) 0.
169 (4.
3) AC 0.
77 (19.
58) 0.
73 (18.
54) 0.
052 (1.
30) 0.
048 (1.
20) 0.
30 (7.
60) 0.
25 (6.
35) 0.
75 (19.
1) Min.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at IF = 5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNIT VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) 10 A IFSM 200 A I2t VF IR IR(H) RθJC TJ TSTG 160 1.
1 10 200 2.
5 - 40 to + 150 - 40 to + 150 A2S V µA µA °C/W °C °C Note : 1.
Thermal Resistance from junction to case with units mounted on a 3.
2" x 3.
2" x 0.
12" (8.
2cm.
x 8.
2cm.
x 0.
3cm.
) Al.
-F...


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