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IRF4N60

Part Number	IRF4N60
Manufacturer	ETC
Description	POWER MOSFET
Published	Jan 17, 2018
Detailed Description	IRF4N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high ene...
Datasheet	IRF4N60 PDF File

Overview

IRF4N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP Top View SYMBOL D GATE DRAIN SOURCE G 12 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Jun...

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