DatasheetsPDF.com

BR601

EIC discrete Semiconductors
Part Number BR601
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Mar 23, 2005
Detailed Description www.eicsemi.com BR600 - BR610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge ...
Datasheet PDF File BR601 PDF File

BR601
BR601

Overview
www.
eicsemi.
com BR600 - BR610 PRV : 50 - 1000 Volts Io : 6.
0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Rated isolation-voltage 2000 VAC * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.
6 grams SILICON BRIDGE RECTIFIERS BR6 0.
158 (4.
00) 0.
142 (3.
60) 0.
127 (3.
20) 0.
047 (1.
20) 0.
445 (11.
30) 0.
405 (10.
30) AC 0.
62 (15.
75) 0.
58 (14.
73) AC 0.
042 (1.
06) 0.
038 (0.
96) 0.
27 (6.
9) 0.
23 (5.
8) 0.
75 (19.
1) Min.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc=50°C IF(AV) 6.
0 A Peak Forward Surge Current, Single half sine wave Superimposed IFSM 200 A on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at IF =3 A.
I2t VF 64 A2S 1.
0 V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 μA Typical Thermal Resistance (Note 1) Operating Junction Temperature Range RθJC TJ 8.
0 - 40 to + 150 °C/W °C Storage Temperature Range TSTG - 40 to + 150 °C Note : (1) Thermal Resistance from junction to case with units mounted on a 2.
6" x 1.
4" x 0.
06" THK (6.
5cm.
x 3.
5cm.
x 0.
15cm.
) Al.
Plate.
H...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)