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BR801

EIC discrete Semiconductors
Part Number BR801
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Mar 23, 2005
Detailed Description BR800 - BR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current c...
Datasheet PDF File BR801 PDF File

BR801
BR801


Overview
BR800 - BR810 PRV : 50 - 1000 Volts Io : 8.
0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR10 0.
520 (13.
20) 0.
480 (12.
20) 0.
158 (4.
00) 0.
142 (3.
60) AC 0.
77 (19.
56) 0.
73 (18.
54) 0.
290 (7.
36) 0.
210 (5.
33) AC 0.
052 (1.
32) 0.
048 (1.
22) 0.
75 (19.
1) Min.
0.
30 (7.
62) 0.
25 (6.
35) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.
1 grams Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at I F = 4.
0 Amp.
Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 50 35 50 100 70 100 200 140 200 400 280 400 8.
0 600 420 600 800 560 800 1000 700 1000 UNIT Volts Volts Volts Amps.
VRRM VRMS VDC IF(AV) IFSM It VF IR I R(H) RθJC TJ TSTG 2 300 160 1.
0 10 200 2.
5 - 40 to + 150 - 40 to + 150 Amps.
AS Volts µA µA 2 °C/W °C °C Notes : 1.
Thermal Resistance from junction to case with units mounted on a 3.
2" x 3.
2" x 0.
12" THK (8.
2cm.
x 8.
2cm.
x 0.
3cm.
) Al.
Plate.
heatsink.
UPDATE : APRIL 23, 1998 RATING AND CHARACTERISTIC C...


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