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BS616LV8011

Brilliance Semiconductor
Part Number BS616LV8011
Manufacturer Brilliance Semiconductor
Description Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Published Mar 23, 2005
Detailed Description BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616LV8011 • Very low operation voltage ...
Datasheet PDF File BS616LV8011 PDF File

BS616LV8011
BS616LV8011


Overview
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616LV8011 • Very low operation voltage : 2.
7 ~ 3.
6V • Very low power consumption : Vcc = 3.
0V C-grade: 40mA (Max.
) operating current I-grade : 50mA (Max.
) operating current 1uA (Typ.
) CMOS standby current • High speed access time : -70 70ns (Max.
) at Vcc=3.
0V -10 100ns (Max.
) at Vcc=3.
0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
5V • Easy expansion with CE1,CE2 and OE options The BS616LV8011 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.
7V to 3.
6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by an active LOW chip enable(CE1,CE2) and active LOW output enable(OE) and three-state output drivers.
The BS616LV8011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV8011 is available in 48-pin BGA package.
„ PRODUCT FAMILY SPEED (ns) Vcc=3.
0V PRODUCT FAMILY OPERATING TEMPERATURE +0 O C to +70 O C -40 O C to +85 O C Vcc RANGE 2.
7V ~ 3.
6V 2.
7V ~ 3.
6V POWER DISSIPATION STANDBY Operating (ICCSB1, Max) Vcc=3.
0V (ICC, Max) Vcc=3.
0V PKG TYPE BS616LV8011AC BS616LV8011AI 70 / 100 70 / 100 16uA 24uA 40mA 50mA BGA-48-0608 BGA-48-0608 „ PIN CONFIGURATIONS 1 A B C D E F G H X D8 D9 VSS VCC D14 D15 A18 2 OE X D10 D11 D12 D13 NC .
A8 3 A0 A3 4 A1 A4 5 A2 6 CE2 D0 D2 VCC VSS D6 „ BLOCK DIAGRAM A4 A3 A2 A1 A0 A17 A16 A15 A14 A13 A12 Address Input Buffer 22 Row Decoder 2048 Memory Array 2048 x 4096 CE1 D1 D3 D4 D5 A5 A17 Vss A14 A12 A9 A6 A7 A16 A15 A 13 A10 4096 D0 16 Data Input Buffer 16 Column I/O .
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D15 .
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Wri...



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