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BS616UV1010

Part Number	BS616UV1010
Manufacturer	Brilliance Semiconductor
Description	Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 DESCRIPTION The BS616UV1010 is a high perfo...
Datasheet	BS616UV1010 PDF File

Overview

BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 DESCRIPTION The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.
8V to 3.
6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.
01uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616UV1010 has an automatic power down feature, reducing the power consumption significantly wh...

Similar Datasheet

BS616UV1010 Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit - Brilliance Semiconductor

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