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BFR193T

Part Number	BFR193T
Manufacturer	Infineon Technologies AG
Description	NPN Silicon RF Transistor
Published	Mar 23, 2005
Detailed Description	BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadb...
Datasheet	BFR193T PDF File

Overview

BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 3 F = 1.
3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T Maximum Ratings Parameter Marking RCs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 80 10 280 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 91 °C 1) Junction temperature Ambient temperature Storage temperature -65 .
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