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BFR340T

Infineon Technologies AG
Part Number BFR340T
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR340T NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation  Transition frequency of 14 GHz...
Datasheet PDF File BFR340T PDF File

BFR340T
BFR340T

Overview
BFR340T NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation  Transition frequency of 14 GHz  High insertion gain  Ideal for low current amplifiers and oscillators 3 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340T Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS  113°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) Marking FAs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 10 2 60 150 -65 .
.
.
150 -65 .
.
.
150 Value Package SC75 Unit V mA mW °C Unit K/W  605 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jul-01-2003 BFR340T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V hFE 60 130 200 IEBO 1 µA ICBO 100 nA ICES 10 µA V(BR)CEO 6 9 V Symbol min.
Values typ.
max.
Unit 2 Jul-01-2003 BFR340T Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min.
typ.
max.
AC Characteristics (verified by random sampling) Transition frequency fT IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz, collector grounded Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.
8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt...


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