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BFR35AP

Siemens Semiconductor Group
Part Number BFR35AP
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector cur...
Datasheet PDF File BFR35AP PDF File

BFR35AP
BFR35AP

Overview
BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.
5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 35AP GEs Q62702-F938 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 2.
5 30 4 mW 280 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 365 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 48 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 15 100 - V µA 10 nA 100 µA 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.
5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 3.
5 5 0.
38 0.
2 0.
7 - GHz pF 0.
6 dB 1.
8 2.
9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.
8 GHz Transducer gain |S21e|2 12.
5 7 15 9.
5 - ...


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