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BFT46

Part Number	BFT46
Manufacturer	NXP
Description	N-channel silicon FET
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product speciﬁcation File under Discrete Semiconductors...
Datasheet	BFT46 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product speciﬁcation File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product speciﬁcation N-channel silicon FET DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope.
The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.
PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable.
Marking code BFT46 = M3p Fig.
1 Simplified outline and symbol, SOT23.
BFT46 handbook, halfpage 3 d s g 1 Top view 2 MAM385 QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Total power dissipation up to Tamb = 40 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz Equivalent noise voltage VDS = 10 V; ID = 200 µA; B = 0,6 to 100 Hz Vn < 0,5 µV  yfs  > 0,5 mS IDSS > < 0,2 mA 1,5 mA ±VDS...

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