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CD483B

Microsemi
Part Number CD483B
Manufacturer Microsemi
Description GENERAL PURPOSE SILICON DIODES
Published Feb 14, 2018
Detailed Description 12 MILS 24 MILS • GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE...
Datasheet PDF File CD483B PDF File

CD483B
CD483B

Overview
12 MILS 24 MILS • GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 VRM V(pk) 80 180 250 270 80 180 250 VRWM V(pk) 70 180 225 225 70 180 225 I O I O IFSM TA=+150°C tp = 1/120 S TA=25°C mA mA A 200 50 200 50 200 50 400 150 200 50 200 50 200 50 2 2 2 5 2 2 2 TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 VF(1) V dc 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 IR1 at VRWM IR2 at VRM IR3 at VRWM TA+25°C TA+25°C TA+150°C nA dc 25 25 25 50 25 25 25 µA µA dc 100 5 100 5 100 5 50 25 100 5 100 5 100 5 CAP @VR =4V pF – – – 2.
0 – – – NOTE 1 AT 100mA (pulsed) except for CD645 which is at 400mA ...


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