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BG3123

Infineon Technologies AG
Part Number BG3123
Manufacturer Infineon Technologies AG
Description DUAL N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BG3123... DUAL N-Channel MOSFET Tetrode 4 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, P...
Datasheet PDF File BG3123 PDF File

BG3123
BG3123

Overview
BG3123.
.
.
DUAL N-Channel MOSFET Tetrode 4 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.
g.
(NTSC, PAL) • Optimized for UHF (amp.
B) and VHF (amp.
A) • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction BG3123 6 5 4 2 1 3 VPS05604 BG3123R 6 5 4 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC B A 1 2 3 1 B A 2 3 GND EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BG3123 BG3123R*** Package SOT363 SOT363 1=G1* 2=G2 1=G1** 2=S Pin Configuration 3=D* 3=D** 4=D** 4=D* 5=S 5=G2 Marking 6=G1** KOs 6=G1* KRs * For amp.
A; ** for amp.
B *** Target Da...


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