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BGY120B

NXP
Part Number BGY120B
Manufacturer NXP
Description UHF amplifier
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D373 BGY120A; BGY120B UHF amplifier modules Objective specific...
Datasheet PDF File BGY120B PDF File

BGY120B
BGY120B

Overview
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D373 BGY120A; BGY120B UHF amplifier modules Objective specification 1997 Nov 11 Philips Semiconductors Objective specification UHF amplifier modules FEATURES • Single 3.
5 V nominal supply voltage • 1 W output power • Easy control of output power by DC voltage • Very high efficiency (typ.
60%) • Silicon bipolar technology • Standby current less than 10 µA.
APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges.
DESCRIPTION The BGY120A and BGY120B are two-stage UHF amplifier modules in a SOT482B package with plastic cover.
Each module consists of two NPN silicon planar transistor dies mounted together with a matching and bias circuit components on a metallized ceramic substrate.
These modules produce an output power of 1 W into a load of 50 Ω with an RF drive power of 5 mW.
PINNING - SOT482B PIN 1 2 3 4 5 BGY120A; BGY120B DESCRIPTION RF input VC VS RF output flange connected to ground handbook, halfpage 5 4 3 2 1 MBK201 Bottom view Fig.
1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C.
TYPE BGY120A BGY120B MODE OF OPERATION CW CW f (MHz) 824 to 849 872 to 905 VS (V) 3.
5 3.
5 PL (W) 1 1 Gp (dB) ≥23 ≥23 η (%) typ.
60 typ.
60 ZS; ZL (Ω) 50 50 1997 Nov 11 2 Philips Semiconductors Objective specification UHF amplifier modules LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VS VC PD PL Tstg Tmb DC supply voltage DC control voltage input drive power load power storage temperature operating mounting-base temperature PARAMETER − − − − −40 −30 BGY120A; BGY120B MIN.
5 MAX.
V V 2.
9 10 1.
4 +100 +100 UNIT mW W °C °C CHARACTERISTICS ZS = ZL = 50 Ω; PD = 5 mW; VS = 3.
5 V; VC ≤ 2.
5 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL f PARAMETER frequency range BGY120A BGY120B IQ IC PL Gp η H2 H3 VSWRin total leakage current control current load power power gain efficiency second harmonic thi...


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