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BGY148A

NXP
Part Number BGY148A
Manufacturer NXP
Description HF amplifier
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D188 BGY148A; BGY148B HF amplifier modules Product specification S...
Datasheet PDF File BGY148A PDF File

BGY148A
BGY148A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D188 BGY148A; BGY148B HF amplifier modules Product specification Supersedes data of 1997 Jul 14 1998 May 13 Philips Semiconductors Product specification HF amplifier modules FEATURES • Single 6 V nominal supply voltage • 3 W output power • Easy control of output power by DC voltage • Silicon bipolar technology • Standby current less than 100 µA.
APPLICATIONS • Portable communication equipment operating in the 400 to 440 MHz and 430 to 488 MHz frequency ranges respectively.
DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package.
Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.
The modules produce an output power of 3 W into a load of 50 Ω with an RF drive power of 10 mW.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C.
TYPE BGY148A BGY148B MODE OF OPERATION CW CW f (MHz) 400 to 440 430 to 488 VS (V) 6 6 PL (W) ≥3 ≥3 handbook, halfpage BGY148A; BGY148B PINNING - SOT421A PIN 1 2 3 4 Flange RF input VC VS RF output ground DESCRIPTION 1 Top view 2 3 4 MSA483 Fig.
1 Simplified outline (SOT421A).
Gp (dB) ≥24.
8 ≥24.
8 η (%) typ.
53 typ.
53 ZS; ZL (Ω) 50 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VS VC PD PL Tstg Tmb Note 1.
In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
DC supply voltage DC control voltage input drive power load power storage temperature operating mounting-base temperature; note1 PARAMETER − − − − −40 −30 MIN.
4 20 3.
5 +100 +100 MAX.
8.
5 V V mW W °C °C UNIT 1998 May 13 2 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B CHARACTERISTICS ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; VC ≤ 3.
5 V; T...


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