DatasheetsPDF.com

BGY1816S

NXP
Part Number BGY1816S
Manufacturer NXP
Description UHF amplifier
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D388 BGY1816S UHF amplifier module Product specification Super...
Datasheet PDF File BGY1816S PDF File

BGY1816S
BGY1816S


Overview
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D388 BGY1816S UHF amplifier module Product specification Supersedes data of 1999 Jan 07 1999 Apr 13 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW.
APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1880 MHz frequency band.
DESCRIPTION The BGY1816S is a three-stage UHF amplifier module in a SOT501A package with a plastic cap.
It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
PINNING - SOT501A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground BGY1816S DESCRIPTION 1 Front view 2 3 4 MBK760 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C.
MODE OF OPERATION CW f (MHz) 1805 to 1880 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥29 η (%) ≥30 ZS; ZL (Ω) 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS − − − −30 −10 MIN.
4.
5 MAX.
5.
5 28 120 20 +100 +90 V V mW W °C °C UNIT 1999 Apr 13 2 Philips Semiconductors Product specification UHF amplifier module CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise specified.
SYMBOL f IS1 IS2 PL Gp η H2 H3 VSWRin PARAMETER frequency supply current supply current load power power gain efficiency second harmonic third harmonic input VSWR stability reverse intermodulation B AM bandwidth ruggedness VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 = 25 to 27 V Pcarrier = 16 W; Preverse = −40 dBc; fi = fc ±200 kHz corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR ≤ 5 : 1 through all phases PD < −60 dBm PD < 20 mW CONDITIONS −...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)