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MMDL770

GME
Part Number MMDL770
Manufacturer GME
Description Schottky Barrier Diode
Published Feb 23, 2018
Detailed Description Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.).  Very Low Capacitance—...
Datasheet PDF File MMDL770 PDF File

MMDL770
MMDL770

Overview
Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.
).
 Very Low Capacitance—1.
0pF @20V.
 Extremely Low minority carrier lifetime.
 High reverse leakage—70V(min.
) Pb Lead-free MMDL770 APPLICATIONS  For high-efficiency UHF and VHF detector applications.
SOD-323 ORDERING INFORMATION Type No.
Marking MMDL770 5H Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC Reverse Voltage VR 70 Power Dissipation Thermal resistance,junction to ambient air PD RθjA 200 635 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V mW ℃/W ℃ ℃ B048 Rev.
A www.
gmesemi.
com 1 Product...


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