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M39L0R8070U3ZE6F

Micron
Part Number M39L0R8070U3ZE6F
Manufacturer Micron
Description NOR Flash
Published Feb 24, 2018
Detailed Description 128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Featur...
Datasheet PDF File M39L0R8070U3ZE6F PDF File

M39L0R8070U3ZE6F
M39L0R8070U3ZE6F

Overview
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package • One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory • One die of 128Mb or 512Mb LPDDR • Supply voltages: – VDDF = VDDQF = 1.
7–1.
95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.
7–1.
95V • Electronic signature: – Manufacturer code: 20h – Top device codes: M58LR128KC = 882Eh M58LR256KC = 881Ch – Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh • 133-ball VFBGA package – RoHS-compliant Flash Memory • Multiplexed address/data • Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Random access: 70ns • Synchronous burst read suspend • Programming time – 2.
5µs typical word program time using buffer enhanced factory program command • Memory organization – Multiple bank memory array: 16Mb banks – Parameter blocks (top or bottom location...


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