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RB520S-30 Datasheet PDF


Part Number RB520S-30
Manufacturer Comchip
Title SMD Schottky Barrier Diodes
Description SMD Schottky Barrier Diodes RB520S-30 Io = 200 mA VR = 30 Volts RoHS Device Features Low reverse current. Designed for mounting on small surface. ...
Features Low reverse current. Designed for mounting on small surface. Extremely thin package. Majority carrier conduction. Mechanical data Case: SOD-523 standard package, molded plastic. Terminals: solderable per MIL-STD-750 ,method 2026. Marking code: cathode band & B Mounting position: Any Weight: 0.0012 g...

File Size 91.59KB
Datasheet RB520S-30 PDF File








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RB520S-30 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 Schottky barrier Diode FEATURES z Small surface mounting type z Low IR z High reliability SOD-523 MARKING: B The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit DC reverse voltage Mean rectifying current NCounrr-erenpt@ettit=i8v.e3mPesak Forward Surge Power dissipation Thermal resistance junction to ambient VR IO IFSM PD RθJA 30 200 1 150 667 Junction temperature Storage temperature Tj Tstg 125 -55~+150 Unit V mA A mW ℃/W ℃ ℃ Electrical.

RB520S-30 : SCHOTTKY BARRIER DIODE RB520S-30 FEATURES Low Forward Voltage Drop Flat Lead SOD-523 Small Outline Plastic Package Extremely Small SOD-523 Package Surface Device Type Mounting ROHS Compliant Green EMC Matte Tin(Sn) Lead Finish Band Indicates Cathode Marking: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. resistive or inductive load. PACKAGE OUTLINE MAXIMUM RATINGS (@T =25OC unless otherwise noted) Symbol PD TSTG TJ VR IF(AV) IFSM Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Reverse Voltage Average Forward Current Peak Forward Surge Current (At 8.3ms single half sine-wave) Value 2.

RB520S-30 : SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES • Low VF drop • Low Reverse Current MECHANICAL DATA • Case: SOD-523 Plastic • Case Material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Moisture Sensitivity: Level 1 per J-STD-020D • Lead Free in RoHS 2002/95/EC Compliant RB520S-30 REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere SOD-523 SOD-523 Dim. Min. Max. A 0.51 0.77 b 0.25 0.35 C 0.08 0.15 D 0.75 0.85 E 1.10 1.30 E1 1.50 1.70 L 0.01 0.07 Dimensions in millimeter Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherwise specified Characteristic Symbol RB520S-30 DC reverse voltage Average Rectified Forward Current Peak Forward Su.

RB520S-30 : ® WON-TOP ELECTRONICS RB520S-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C Mechanical Data  Case: SOD-523, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.002 grams (approx.)  Marking: B  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E A B L D G SOD-523 Dim Min Max A 1.50 1.70 B 1.10 1.30 C 0.70 0.90 D 0.30 Typical E 0.10 Typical G 0.50 0.70 L .

RB520S-30 : SOD-523 Plastic-Encapsulate Diodes RB520S-30 Schottky barrier Diodes FEATURES z Small surface mounting type z Low IR. (IR = 0.1 uA) z High reliability RB520S-30 Crownpo Technology SOD-523 + - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VR IO IFSM Tj Tstg 30 200 1 125 -40-125 Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. Unit 0.6 V 1 μA Unit V mA A ℃ ℃ Conditions IF=200mA VR=10V 25-November-11 Document No. RB520S-30 www.crownpo.com Typical Characteristic.

RB520S-30 : Silicon epitaxial planar The RB520S-30 is available in SOD-523 Package. ORDERING INFORMATION FEATURES  Extremely small surface mounting type.  Extremely Fast Switching Speed  Extremely Low Forward Voltage 0.6V(max) @IF = 200mA  Low Reverse Current  Available in SOD-523 Package Package Type Part Number SOD-523 RB520S-30 Note Package=3,000Tape/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION APPLICATIONS  Low current rectification and high speed switching REV1.0 - AUG 2011 RELEASED - -1- AiT Components Inc. www.ait-components.com RB520S-30 SCHOTTKY DIODES SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS TA = 25°C VR, DC reverse voltage 30V IO, Mean rectifyi.

RB520S-30 : Schottky Barrier Diode FEATURES  Low IR.  High reliability.  Small surface mounting. Pb Lead-free Production specification RB520S-30 APPLICATIONS  Low current rectification. ORDERING INFORMATION Type No. Marking RB520S-30 B SOD-523 Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage Mean rectifying current Peak forward surge current Total device dissipation Junction and storage temperature VR IO IFSM PT Tj ,Tstg 30 V 200 mA 1A 200 mW -40 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Revers.

RB520S-30 : DATA SHEET SEMICONDUCTOR 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode RB520S-30 H DEVICE MARKING CODES: Device Type RB520S-30 Device Marking 5J Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 200 mW TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature +150 °C VR IF(AV) Reverse Voltage Average Forward Current 30 V 200 mA IFSM Peak Forward Surge Current (At 8.3ms single half sine-wave) 1A These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: SOD-523 Flat Lead ƒ Low .

RB520S-30 : Data Sheet Schottky barrier diode RB520S-30 Applications Low current rectification Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 0.6for 1.7 Features 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. Construction Silicon epitaxial planar 1.2±0.05d 1.6±0.1 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 EMD2 Structure 0.2±0.05 1.75±0.1 8.0±0.15 3.5±0.05 2.2.4405±±0.0.015NotNeRewcDoemsimgennsde 11..235±0.0066 0 11..2256±0.0.0065 00 0.6 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average recti.

RB520S-30 : CODE RK G Green compound RK G Green compound RK G Green compound Document Number: DS_S1404003 Version: B14 Small Signal Product DIMENSIONS SOD-523F SUGGESTED PAD LAYOUT RB520S-30 Taiwan Semiconductor DIM. A B C D E F Unit (mm) Min Max 0.70 0.90 1.50 1.70 0.25 0.40 1.10 1.30 0.50 0.77 0.07 0.20 Unit (inch) Min Max 0.028 0.035 0.059 0.067 0.010 0.016 0.043 0.051 0.020 0.030 0.003 0.008 DIM. X X1 Y Unit (mm) Typ. 0.60 2.30 0.80 Unit (inch) Typ. 0.024 0.091 0.031 Document Number: DS_S1404003 Version: B14 Small Signal Product RB520S-30 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, ass.

RB520S-30 : RB520S-30 Schottky Barrier Diode FEATURES z Low IR=0.1μA. z High reliability. z Small surface mounting. Pb Lead-free APPLICATIONS z Low current rectification. ORDERING INFORMATION Type No. Marking RB520S-30 B SOD-523 Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage Mean rectifying current Peak forward surge current Total device dissipation Junction and storage temperature VR IO IFSM PT Tj ,Tstg 30 V 200 mA 1A 200 -40 to +125 mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Reverse current IR .

RB520S-30 : RoHS RB520-30 RB520S-30 Schottky barrier Diodes DFEATURES Small surface mounting type TLow reverse current and low forward voltage .,LHigh reliability 0.30 1.20 1.60 0.80 0.10 0.65 COMaximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ ICParameter Symbol Limits DC reverse voltage VR 30 NMean rectifying current IO 200 OPeak forward surge current IFSM 1 RJunction temperature Tj 125 TStorage temperature Tstg -45~+125 CElectrical Ratings @TA=25℃ Parameter EForward voltage WEJ ELReverse current Symbol Min. Typ. Max. Unit VF 0.6 V IR 1.0 μA SOD-523 Unit V mA A ℃ ℃ Conditions IF=200mA VR=10V WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com .

RB520S-30 : RB520S-30 SCHOTTKY BARRIER DIODES PRODUCT SUMMARY SOD-523 Plastic-Encapsulate Diodes FEATURES Small surface mounting type Low IR. (IR = 0.1 uA) High reliability Pb-free; RoHS-compliant SOD-523 + - MARKING: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @TA=25 oC Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40-125 Unit V mA A ℃ ℃ ELECTRICAL RATINGS @TA=25 oC Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. Unit 0.6 V 1 μA Conditions IF=200mA VR=10V 08/03/2007 Rev.1.00 www.SiliconStandard.com 1 TYPICAL CHARACTERISTICS .

RB520S-30 : Cathode Anode 2 B Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Note: ESD sensitive product handling required. Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.6 1 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 .

RB520S-30 : SMD Type Schottky barrier diode RB520S-30 Diodes Features Ultra Small mold type.(EMD2) Low IR. High reliability. +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3 -0.05 Unit: mm 0.6+0.1 -0.1 - 1.6+0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Absolute Maximum Ratings Ta = 25 P aram eter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz.1cyc) Junction temperature Storage temperature Symbol VR IO IFSM Tj Tst g Lim its 30 200 1 150 -40 to +125 Unit V mA A Electrical C haracteristics Ta = 25 Param eter Forward voltage Reverse current Sym bol VF IR C o n d itio n s IF = 2 m A VR = 10V Min Typ Max 0.6 1 U n it V A Marking Marking B www.kexin.co.

RB520S-30 : BL Galaxy Electrical Production specification Schottky Barrier Diode FEATURES z Low IR=0.1μA. z High reliability. z Small surface mounting. Pb Lead-free RB520S-30 APPLICATIONS z Low current rectification. ORDERING INFORMATION Type No. Marking RB520S-30 B SOD-523 Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature VR IO IFSM Tj Tstg 40 200 1 125 -40-125 V mA A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.39 0.55 1 Uni.




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