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BLV2047

NXP
Part Number BLV2047
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 J...
Datasheet PDF File BLV2047 PDF File

BLV2047
BLV2047

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety.
APPLICATIONS handbook, halfpage BLV2047 PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION 1 • Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range.
Top view 3 2 MBK200 DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap.
The emitter is connected to the flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.
0; f2 = 2000.
1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (dB) ≥8.
5 ≥9 ηC (%) ≥40 ≥33 dim (dBc) − ≤−30 Fig.
1 Simplified outline.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base open collector MIN.
− − − − − −65 − MAX.
65 27 3 10 270 +150 200 UNIT V V V A W °C °C 1999 Jun 09 2 Philips Semiconductors Product specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1.
Capacitance of die only.
PARAMETER...


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