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MGP11N60ED

Motorola
Part Number MGP11N60ED
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor
Published Mar 1, 2018
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode...
Datasheet PDF File MGP11N60ED PDF File

MGP11N60ED
MGP11N60ED

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
Co–packaged IGBTs save space, reduce assembly time and cost.
This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device.
• Industry Standard TO–220 Package • High Speed: Eoff = 60 mJ per Amp typical at 125°C • High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V • Low On–Voltage — ...


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