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MGP4N60ED

Motorola
Part Number MGP4N60ED
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor
Published Mar 1, 2018
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode...
Datasheet PDF File MGP4N60ED PDF File

MGP4N60ED
MGP4N60ED

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
Co–packaged IGBTs save space, reduce assembly time and cost.
This new E–s...


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